Iyini i-Narrow Pulse Phenomenon
Njengohlobo lokushintshwa kwamandla, i-IGBT idinga isikhathi esithile sokusabela kusukela kusignali yezinga lesango kuya kunqubo yokushintsha idivayisi, njengoba kulula ukuminyanisa isandla ngokushesha kakhulu ekuphileni ukuze ushintshe isango, ukushaya kwenhliziyo okufushane kakhulu kungase kubangele ukuphakama kakhulu. ama-voltage spikes noma izinkinga ze-high frequency oscillation.Lesi simo senzeka ngokungakwazi ukuzisiza ngezikhathi ezithile njengoba i-IGBT iqhutshwa amasiginali aguquliwe we-PWM wemvamisa ephezulu.Lapho umjikelezo womsebenzi umncane, kuba lula ukukhipha ama-pulses amancane, kanye nezici zokuhlehla zokuhlehla ze-IGBT anti-parallel renewal diode FWD ziba ngokushesha ngesikhathi sokuvuselela kanzima.Ku-1700V/1000A IGBT4 E4, ukucaciswa kwezinga lokushisa lendawo ye-Tvj.op = 150 ℃, isikhathi sokushintsha tdon = 0.6us, tr = 0.12us kanye ne-tdoff = 1.3us, tf = 0.59us, asikwazi ukuba nobubanzi obuncane be-pulse kunesamba sesikhathi sokushintsha esibekiwe.Empeleni, ngenxa yezimpawu ezihlukene zomthwalo ezifana ne-photovoltaic kanye nokugcinwa kwamandla kakhulu lapho amandla e-+/- 1, i-pulse ewumngcingo izovela eduze kwephuzu lamanje elinguziro, njenge-reactive power generator SVG, isihlungi esisebenzayo se-APF power factor of 0, i-pulse ewumngcingo izovela eduze komthwalo omkhulu wamanje, ukusetshenziswa kwangempela kwamanje eduze kwephuzu elinguziro kungenzeka ukuthi kuvele ku-oscillation ye-waveform yokukhishwa kwe-high-frequency, izinkinga ze-EMI ziyalandela.
Imbangela ye-pulse ewumngcingo
Kusukela ezintweni eziyisisekelo ze-semiconductor, isizathu esiyinhloko sesenzo se-pulse ewumngcingo kungenxa ye-IGBT noma i-FWD esanda kuqala ukuvula, engagcwaliswanga ngokushesha ngabathwali, lapho othwala inethiwekhi isakazeka lapho ivala i-IGBT noma i-diode chip, uma kuqhathaniswa nomthwali ngokuphelele. igcwaliswe ngemva kokuvalwa, i-di/dt ingase ikhule.Ukucisha kwe-IGBT okuphezulu okuhambisanayo kuzokwenziwa ngaphansi kwe-commutation stray inductance, engase futhi ibangele uguquko olusheshayo ku-diode reverse recovery current futhi ngaleyo ndlela into ye-snap-off.Nokho, lesi simo sihlobene eduze nobuchwepheshe be-chip ye-IGBT ne-FWD, i-voltage yedivayisi namanje.
Okokuqala, kufanele siqale ku-classic double pulse schematic, isibalo esilandelayo sibonisa ukushintshwa kwe-IGBT gate drive voltage, yamanje kanye ne-voltage.Kusuka kungqondongqondo yokushayela ye-IGBT, ingahlukaniswa ibe yi-pulse off time toff emincane, empeleni ehambelana nesikhathi sokuqhuba kahle se-diode FWD, enethonya elikhulu ekubuyiseleni okuphambene nesivinini samanje nokululama, njengephuzu A. emfanekisweni, amandla aphezulu aphezulu okubuyisela emuva angeke adlule umkhawulo we-FWD SOA;kanye nethoni yesikhathi sokuvula i-pulse encane, lokhu kunomthelela omkhulu uma kuqhathaniswa nenqubo yokucisha ye-IGBT, njengephoyinti B esithombeni, ikakhulukazi ama-voltage spikes e-IGBT kanye nama-oscillations alandelayo alandelayo.
Kodwa ukucisha idivayisi ye-pulse emincane kakhulu kuzodala ziphi izinkinga?Empeleni, yimuphi umkhawulo wobubanzi bokushaya kwenhliziyo obuncane obuzwakalayo?Lezi zinkinga kunzima ukuthola amafomula omhlaba wonke ukubala ngokuqondile ngethiyori namafomula, ukuhlaziywa kwethiyori kanye nocwaningo nakho kuncane uma kuqhathaniswa.Kusuka kuhlelo lwegagasi lokuhlola lwangempela kanye nemiphumela ukuze ubone igrafu ukuze ikhulume, ukuhlaziya kanye nesifinyezo sezimpawu nokufana kohlelo lokusebenza, kungasiza kakhudlwana ukukusiza uqonde lesi simo, bese ulungiselela ukwakheka ukuze ugweme izinkinga.
Ukuvula i-IGBT emincane ye-pulse
I-IGBT njengoshintsho olusebenzayo, ukusebenzisa izimo zangempela ukubona igrafu ukuze ikhulume ngalesi simo kuyakholisa kakhulu, ukuba nempahla ethile eyomile.
Isebenzisa imojula yamandla aphezulu IGBT4 PrimePACK™ FF1000R17IE4 njengento yokuhlola, izici zokucisha idivayisi lapho ithani lishintsha ngaphansi kwezimo ze-Vce=800V, Ic=500A, Rg=1.7Ω Vge=+/-15V, Ta= I-25 ℃, ebomvu i-Ic eqoqayo, eluhlaza okwesibhakabhaka yi-voltage emikhawulweni yomibili ye-IGBT Vce, eluhlaza okwesibhakabhaka yi-voltage Vge.Vge.i-pulse ton yehla isuka ku-2us iye ku-1.3us ukuze ubone ukuguqulwa kwalesi sipike se-voltage Vcep, isibalo esilandelayo sibona ngeso lengqondo i-waveform yokuhlola ngokuqhubekayo ukuze ubone inqubo yoshintsho, ikakhulukazi ekhonjiswe kumbuthano.
Uma i-ton ishintsha i-Ic yamanje, ku-Vce dimension ukuze ubone ushintsho kuzici ezibangelwa i-ton.Amagrafu angakwesokunxele nakwesokudla abonisa ama-voltage spikes Vce_peak kumazamanje ahlukene Ic ngaphansi kwemibandela efanayo ye-Vce=800V kanye ne-1000V ngokulandelanayo.kusukela emiphumeleni yokuhlolwa efanele, i-ton inomphumela omncane ku-voltage spikes Vce_peak kumaza amancane;lapho ukucisha kwamanje kukhuphuka, ukucisha kwe-pulse ewumngcingo kuthambekele ekushintsheni okungazelelwe kumanje futhi kubangele ama-voltage aphezulu.Ukuthatha igrafu yesokunxele nesokudla njengezixhumanisi ukuze kuqhathaniswe, i-ton inomthelela omkhulu enqubweni yokuvala shaqa lapho i-Vce ne-Ic yamanje iphakeme, futhi kungenzeka ibe noshintsho lwamanje oluzumayo.Kusukela ekuhlolweni ukuze ubone lesi sibonelo FF1000R17IE4, ubuncane be-pulse ton isikhathi esinengqondo esingekho ngaphansi kuka-3us.
Ingabe ukhona umehluko phakathi kokusebenza kwamamojula amanje aphezulu kanye namamojula amanje aphansi kule nkinga?Thatha i-FF450R12ME3 imojula yamandla aphakathi nendawo njengesibonelo, isibalo esilandelayo sibonisa i-voltage overshoot lapho ithani lishintsha kumaza okuhlola ahlukene Ic.
Imiphumela efanayo, umthelela we-ton on the turn-off voltage overshoot awusebenzi ezimeni zamanje eziphansi ngaphansi kuka-1/10*Ic.Lapho okwamanje kukhushulwa kumanje olinganiselwe we-450A noma ngisho no-2*Ic wamanje we-900A, ukudlula kwamandla kagesi ngobubanzi bethani kubonakala kakhulu.Ukuze kuvivinywe ukusebenza kwezimo zezimo zokusebenza ngaphansi kwezimo ezimbi kakhulu, izikhathi ezi-3 kunamanje ezilinganiselwe ze-1350A, ama-voltage spikes adlule i-voltage evimbayo, eshumekwe ku-chip ezingeni elithile lamandla kagesi, ngaphandle kobubanzi bethani. .
Isibalo esilandelayo sibonisa amagagasi okuhlola okuqhathanisa we-ton=1us no-20us kokuthi Vce=700V kanye ne-Ic=900A.Kusuka esivivinyweni sangempela, ububanzi be-module pulse ku-ton=1us sebuqalile uku-oscillate, futhi i-voltage spike Vcep ingu-80V ngaphezu kwe-ton=20us.Ngakho-ke, kunconywa ukuthi isikhathi esincane se-pulse akufanele sibe ngaphansi kwe-1us.
Ukuvula i-pulse ewumngcingo ye-FWD
Kumjikelezo webhuloho eliwuhhafu, i-IGBT turn-off pulse toff ihambisana nethoni yesikhathi yokuvula ye-FWD.Isibalo esingezansi sibonisa ukuthi uma isikhathi sokuvula se-FWD singaphansi kuka-2us, ukuphakama kwe-FWD ehlehlayo kwamanje kuzokhuphuka kumanje olinganisiwe we-450A.Uma i-toff ingaphezu kuka-2us, inani eliphakeme le-FWD lokuhlehla lamanje alishintshile.
I-IGBT5 PrimePACK™3 + FF1800R17IP5 ukuze ibone izici zama-diode anamandla aphezulu, ikakhulukazi ngaphansi kwezimo eziphansi zamanje ezinezinguquko zethani, umugqa olandelayo ubonisa i-VR = 900V, izimo ze-1200V, kumibandela yamanje encane IF = 20A yokuqhathanisa okuqondile kwamagagasi amabili, kuyacaca ukuthi uma i-ton = 3us, i-oscilloscope ayikwazanga ukubamba I-amplitude yalokhu ku-oscillation ephezulu.Lokhu kufakazela futhi ukuthi ukuzungeza kwemvamisa ephezulu yomthwalo wamanje ngaphezu kwephoyinti elinguziro ezinhlelweni zokusebenza zedivayisi yamandla aphezulu kanye nenqubo yokuhlehla emuva kwesikhathi esifushane ye-FWD kuhlobene eduze.
Ngemuva kokubheka i-waveform enembile, sebenzisa idatha yangempela ukuze uqhubeke ulinganise futhi uqhathanise le nqubo.I-dv/dt kanye ne-di/dt ye-diode iyahlukahluka nge-toff, futhi lapho isikhathi sokuqhuba se-FWD sisincane, izici zayo ezihlehla zizoba ngokushesha.Lapho i-VR iphakeme kuzo zombili iziphetho ze-FWD, njengoba i-diode conduction pulse iba mncane, isivinini sayo sokuhlehla se-diode sizosheshiswa, ngokubheka idatha ku-ton = 3us izimo.
I-VR = 1200V uma.
dv/dt=44.3kV/us;di/dt=14kA/us.
Ku-VR=900V.
dv/dt=32.1kV/us;di/dt=12.9kA/us.
Uma kubhekwa i-ton=3us, i-waveform high-frequency oscillation inamandla kakhulu, futhi ngale kwendawo yokusebenza ephephile ye-diode, isikhathi sokusebenza akufanele sibe ngaphansi kuka-3us ukusuka endaweni yokubuka ye-diode FWD.
Ekucacisweni kwe-high-voltage 3.3kV IGBT ngenhla, ithoni yesikhathi sokuhamba phambili ye-FWD ichazwe ngokucacile futhi iyadingeka, kuthathwe i-2400A/3.3kV HE3 njengesibonelo, ubuncane besikhathi sokuqhuba i-diode esingu-10us sinikezwe ngokucacile njengomkhawulo, okubangelwa ukuthi i-inductance ye-circuit circuit stray inductance kuzinhlelo zokusebenza zamandla aphezulu sikhulu kakhulu, isikhathi sokushintsha side kakhulu, futhi esidlulayo ohlelweni lokuvulwa kwedivayisi Kulula ukudlula ukusetshenziswa kwamandla okuvunyelwe kwe-diode ephezulu ye-PRQM.
Kusukela kumagagasi okuhlola wangempela kanye nemiphumela yemojuli, bheka amagrafu bese ukhuluma ngezifinyezo ezithile eziyisisekelo.
1. umthelela wethoni yobubanzi be-pulse ku-IGBT cisha i-current encane (cishe i-1/10*Ic) mincane futhi ingashaywa indiva.
2. I-IGBT incike okuthile kuthani lobubanzi be-pulse lapho ivala amandla amanje aphezulu, ithoni encane iphakamisa i-voltage spike V, futhi umkhondo wamanje wokucisha uzoshintsha kungazelelwe futhi kuzokwenzeka i-oscillation ephezulu.
3. Izici ze-FWD zisheshisa inqubo yokuhlehla yokubuyisela njengoba isikhathi esibekiwe siba sifushane, futhi ukuba mfushane kwe-FWD ngesikhathi kuzodala i-dv/dt ne-di/dt enkulu, ikakhulukazi ngaphansi kwezimo eziphansi zamanje.Ngaphezu kwalokho, ama-IGBT anamandla kagesi aphezulu anikezwa ubuncane obucacile besikhathi sokuvula i-diode tonmin=10us.
Amagagasi okuhlola wangempela ephepheni anikeze isikhathi esincane sereferensi sokudlala indima.
I-Zhejiang NeoDen Technology Co., Ltd. ibikhiqiza futhi ithumela kwamanye amazwe imishini emincane yokukhetha nendawo kusukela ngo-2010. Isebenzisa i-R&D yethu ecebile enokuhlangenwe nakho, ukukhiqizwa okuqeqeshwe kahle, i-NeoDen izuza idumela elihle kumakhasimende omhlaba wonke.
Njengoba kukhona emhlabeni wonke emazweni angaphezu kwe-130, ukusebenza okuhle kakhulu, ukunemba okuphezulu nokuthembeka kwemishini ye-NeoDen PNP kuyenza ifanelekele i-R&D, i-prototyping yobungcweti kanye nokukhiqizwa kwenqwaba encane kuya kwemaphakathi.Sihlinzeka ngesixazululo sochwepheshe semishini yokumisa eyodwa ye-SMT.
Engeza:No.18, Tianzihu Avenue, Tianzihu Town, Anji County, Huzhou City, Zhejiang Province, China
Ucingo:86-571-26266266
Isikhathi sokuthumela: May-24-2022