Isekethe yomshayeli we-semiconductor yamandla iyingxenye ebalulekile yamasekethe ahlanganisiwe, anamandla, asetshenziselwa ama-IC abashayeli be-IGBT ngaphezu kokuhlinzeka ngezinga lokushayela kanye nelamanje, ngokuvamile ngemisebenzi yokuvikela idrayivu, okuhlanganisa ukuvikelwa kwesekethe emfushane ye-desaturation, ukuvala i-undervoltage, i-Miller clamp, ukuvalwa kwezigaba ezimbili. , ukuvala shaqa okuthambile, i-SRC (ukulawulwa kwezinga elibulalayo), njll. Imikhiqizo nayo inamazinga ahlukene okusebenza kokuhlukanisa.Kodwa-ke, njengesifunda esihlanganisiwe, iphakheji layo linquma ukusetshenziswa kwamandla aphezulu, umshayeli we-IC ophumayo wamanje angaba ngaphezu kwe-10A kwezinye izimo, kodwa namanje akakwazi ukuhlangabezana nezidingo zokushayela zamamojula aphezulu e-IGBT amanje, leli phepha lizoxoxa ngokushayela kwe-IGBT. ukwanda kwamanje nokwamanje.
Indlela yokwandisa umshayeli wamanje
Lapho idrayivu yamanje idinga ukunyuswa, noma lapho ushayela i-IGBTs nge-high current kanye ne-capacitance enkulu yesango, kuyadingeka ukwandisa okwamanje kumshayeli we-IC.
Ukusebenzisa i-bipolar transistors
Umklamo ojwayelekile kakhulu womshayeli wesango le-IGBT uwukubona ukunwetshwa kwamanje ngokusebenzisa umlandeli we-emitter ohambisanayo.Okukhiphayo okwamanje kwe-emitter follower transistor kunqunywa inzuzo ye-DC ye-transistor hFE noma i-β kanye nesisekelo samanje se-IB, lapho okwamanje okudingekayo ukushayela i-IGBT inkulu kune-IB*β, khona-ke i-transistor izongena endaweni yokusebenza ewumugqa kanye nokuphumayo. idrayivu yamanje ayanele, khona-ke ijubane lokushaja nelokukhipha le-IGBT capacitor lizohamba kancane futhi ukulahlekelwa kwe-IGBT kukhuphuke.
Ukusebenzisa ama-MOSFETs
Ama-MOSFET angaphinda asetshenziselwe ukunwetshwa kwamanje komshayeli, isekethe ngokuvamile yakhiwa i-PMOS + NMOS, kodwa izinga le-logic lesakhiwo sesekethe liphambene ne-transistor push-pull.Idizayini yomthombo weshubhu ephezulu ye-PMOS ixhunywe kugesi omuhle, isango liphansi kunomthombo we-voltage enikeziwe ye-PMOS evuliwe, futhi okukhiphayo kwe-IC yomshayeli kuvamise ukuvuleka kwezinga eliphezulu, ngakho-ke ukusetshenziswa kwesakhiwo se-PMOS + NMOS ingadinga inverter ekwakhiweni.
Ngama-bipolar transistors noma ama-MOSFET?
(1) Umehluko osebenzayo, ngokuvamile kuzinhlelo zokusebenza zamandla aphezulu, imvamisa yokushintsha ayiphezulu kakhulu, ngakho-ke ukulahlekelwa kwe-conducting yiyona eyinhloko, lapho i-transistor inenzuzo.Imiklamo eminingi yamanje yamandla aphezulu aphezulu, njengamadrayivu emoto kagesi, lapho ukuchithwa kokushisa kunzima futhi amazinga okushisa aphezulu ngaphakathi kwekesi elivalekile, lapho ukusebenza kahle kubaluleke kakhulu futhi ama-transistor circuits angakhethwa.
(2) Ukukhishwa kwesixazululo se-bipolar transistor kunokwehla kwamandla kagesi okubangelwa i-VCE(sat), amandla kagesi okuphakelayo adinga ukunyuswa ukuze kunxeshezelwe ishubhu lokushayela i-VCE(sat) ukuze kuzuzwe amandla kagesi angu-15V, kuyilapho isisombululo se-MOSFET cishe ingafinyelela okukhiphayo ukusuka kumzila wesitimela ukuya kusitimela.
(3) I-MOSFET imelana ne-voltage, i-VGS cishe engu-20V kuphela, okungase kube inkinga edinga ukunakwa lapho kusetshenziswa izinto zikagesi ezinhle nezingezinhle.
(4) Ama-MOSFET ane-coefficient yezinga lokushisa elibi lika-Rds(on), kuyilapho ama-bipolar transistors ane-coefficient yezinga lokushisa elihle, futhi ama-MOSFET anenkinga yokubaleka okushisayo uma exhunywe ngokuhambisana.
(5) Uma ushayela ama-Si/SiC MOSFET, isivinini sokushintsha sama-bipolar transistors ngokuvamile sihamba kancane kunento yokushayela i-MOSFETs, okufanele kubhekwe ukuthi isebenzisa ama-MOSFET ukuze inwebe imanje.
(6) Ukuqina kwesiteji sokufaka ku-ESD kanye nogesi wokuhlinza, ukuhlangana kwe-bipolar transistor PN kunenzuzo enkulu uma kuqhathaniswa ne-MOS gate oxide.
Ama-bipolar transistors kanye nezici ze-MOSFET azifani, ukuthi yini ozoyisebenzisa noma udinga ukuzinqumela wena ngokuhambisana nezidingo zokuklama uhlelo.
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Isikhathi sokuthumela: May-17-2022